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采用尖端硅技術(shù)的新型振蕩器SSO32C3A481-25.000M是6G模塊的理想選擇

2023-06-21 15:31:47 

振蕩器

Suntsu發(fā)布采用尖端硅技術(shù)的新型振蕩器

與需要石英或MEMS等時(shí)鐘源來產(chǎn)生輸出頻率的傳統(tǒng)石英晶體振蕩器不同，Suntsu的無時(shí)鐘硅振蕩器的結(jié)構(gòu)可以在惡劣和高振動(dòng)環(huán)境下實(shí)現(xiàn)高度可靠的時(shí)鐘，而無需使用石英或MEMS。
內(nèi)置頻率合成和溫度傳感器可產(chǎn)生10kHz至350MHz的頻率范圍，在-40℃至85℃范圍內(nèi)頻率穩(wěn)定性為+/-50ppm，而LDO和濾波器電路可增強(qiáng)電源噪聲抑制，實(shí)現(xiàn)低抖動(dòng)性能。由于其靈活的頻率配置和輸出物流，這些振蕩器具有相對(duì)較短的生產(chǎn)時(shí)間，這對(duì)供應(yīng)鏈的連續(xù)性至關(guān)重要。采用尖端硅技術(shù)的新型振蕩器SSO32C3A481-25.000M是6G模塊的理想選擇
硅振蕩器

Suntsu松圖SSO32C晶振，是一款小體積晶振尺寸3.2x2.5mm四腳貼片晶振，石英晶振，有源晶振，CMOS輸出石英晶體振蕩器，全硅，不含石英和MEMS，提供50ppm(頻率穩(wěn)定性)，內(nèi)置LDO和電源濾波電路，濕度敏感度等級(jí)2，具有超小型，輕薄型，低抖動(dòng)，低功耗，高性能，高精度，低電壓等特點(diǎn)。應(yīng)用程序：智能終端，以太網(wǎng)，消費(fèi)電子產(chǎn)品，通信設(shè)備，無線藍(lán)牙，車載控制器，醫(yī)療設(shè)備，數(shù)碼電子，物聯(lián)網(wǎng)等應(yīng)用。采用尖端硅技術(shù)的新型振蕩器SSO32C3A481-25.000M是6G模塊的理想選擇

SSO32C

產(chǎn)品編碼 石英晶體晶振 輸出 抖動(dòng) 電壓 頻率穩(wěn)定性 工作溫度
SSO32C1A071-10.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-100.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-12.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-125.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-16.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-20.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-24.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-25.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-40.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-48.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A071-50.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm 0°C - +70°C
SSO32C1A161-10.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-100.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-12.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-125.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-16.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-20.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-24.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-25.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-40.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-48.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A161-50.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +60°C
SSO32C1A171-10.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-100.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-12.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-125.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-16.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-20.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-24.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR 貼片晶振 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-25.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-40.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-48.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A171-50.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -10°C - +70°C
SSO32C1A271-10.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-100.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-12.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-125.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-16.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-20.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-24.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-25.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-40.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-48.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A271-50.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -20°C - +70°C
SSO32C1A381-10.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-100.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-12.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-125.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-16.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-20.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-24.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-25.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-40.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-48.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A381-50.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -30°C - +85°C
SSO32C1A481-10.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -40°C - +85°C
SSO32C1A481-100.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -40°C - +85°C
SSO32C1A481-12.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -40°C - +85°C
SSO32C1A481-125.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -40°C - +85°C
SSO32C1A481-16.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -40°C - +85°C
SSO32C1A481-20.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -40°C - +85°C
SSO32C1A481-24.000M 3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR CMOS 1.0ps 1.8V±5% ±50ppm -40°C - +85°C
SSO32C-1

采用尖端硅技術(shù)的新型振蕩器SSO32C3A481-25.000M是6G模塊的理想選擇

石英晶體振蕩器優(yōu)點(diǎn)：
1、石英鐘走時(shí)準(zhǔn)、耗電省、經(jīng)久耐用為其最大優(yōu)點(diǎn)。不論是老式石英鐘或是新式多功能石英鐘都是以石英晶體振蕩器為核心電路，其頻率精度決定了電子鐘表的走時(shí)精度。
2、隨著電視技術(shù)的發(fā)展，近來彩電多采用500kHz或503kHz的晶體振蕩器作為行、場(chǎng)電路的振蕩源，經(jīng)1/3的分頻得到15625Hz的行頻，其穩(wěn)定性和可靠性大為提高。而且晶振價(jià)格便宜，更換容易。
3、在通信系統(tǒng)產(chǎn)品中，石英晶體振蕩器的價(jià)值得到了更廣泛的體現(xiàn)，同時(shí)也得到了更快的發(fā)展。許多高性能的石英晶振主要應(yīng)用于通信網(wǎng)絡(luò)、無線數(shù)據(jù)傳輸、高速數(shù)字?jǐn)?shù)據(jù)傳輸?shù)取?/span>




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