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1XVD008192VB晶振型號DSV321SV 3225 8.19M晶體管器件物理領(lǐng)域取得進展

該研究得到國家重點研發(fā)計劃項目電子器件與集成技術(shù)重點實驗室開放課題、國家自然科學基金及中科院戰(zhàn)略性先導科技項目的KDS晶振大真空晶體支持.針對此問題團隊制備了基于p型和n型有機分子構(gòu)成的單晶電荷轉(zhuǎn)移界面的晶體管器件,探究了電荷轉(zhuǎn)移界面以及柵氧界面電場的相互作用對晶體管工作時載流子及電導分布特性的影響.相較于界面單晶體內(nèi)的缺陷態(tài)減少3個數(shù)量級以上,這意味著更小的散射概率和更高的器件遷移率.

日本KDS晶振,Y1XVD008192VB有源晶振編碼,石英晶振型號DSV321SV 3225 8.19M

通過開爾文探針顯微鏡對表面電勢的柵壓依賴性表征和二維數(shù)值仿真,證實電荷轉(zhuǎn)移界面的內(nèi)建電場與柵氧界面電場發(fā)生有效耦合,提高了載流子體傳輸比例,減少了界面無序因素對載流子傳輸?shù)南拗谱饔?/span>,大幅度提升了器件的跨導.有源晶振相比于傳統(tǒng)基于無序半導體材料的場效應(yīng)晶體管中摻雜引起的缺陷鈍化現(xiàn)象,由有序單晶電荷轉(zhuǎn)移界面制備的場效應(yīng)晶體管不僅整體電導、遷移率高,還具有跨導不依賴于柵壓的電學特性,

日本KDS晶振,Y1XVD008192VB有源晶振編碼,石英晶振型號DSV321SV 3225 8.19M

品牌	原廠代碼	型號	尺寸	頻率	負載/電壓
KDS	1ZC12256	DST1210A	1210	32.768K	9PF
KDS	1TJL070DR1A0009	DST1610AL	1610	32.768K	7PF
KDS	1TJH125DR1A0004	DST1610A	1610	32.768K	12.5PF
KDS	1TJF080DP1AA003	DST310S	3215	32.768K
KDS	1TJF080DP1AA003	DST310S	3215	32.768k	8PF
KDS	1TJF0SPDJ1AI00S	DST310S	3215	32.768k
KDS	1TJF080DP1AI00P	DST310S	3215	32.768k	8PF
KDS	1TJF090DP1AI007	DST310S	3215	32.768k	9PF
KDS	1TJF0SPDP1AI008	DST310S	3215	32.768k
KDS	1TJF125DP1AI009	DST310S	3215	32.768k	12.5PF
KDS	1TJF090DP1AA00L	DST310S	3215	32.768k	9PF
KDS	1TJF080DP1AA00K	DST310S	3215	32.768k	8PF
KDS	1TJF0SPDP1AA00G	DST310S	3215	32.768k
KDS	1TJF0SPDN1A000B	DST310S	3215	32.768k
KDS	1TD125DGNS003	DT-26	206	32.768k	12.5PF
KDS	1TD125DHNS036	DT-26	206	32.768k	12.5PF
KDS	1TD125DHNS002	DT-26	206	32.768k	12.5PF
KDS	1TD060DHNS014	DT-26	206	32.768k	6.0PF
KDS	1TD125BHNS001	DT-26	206	32.768k	12.5PF
KDS	1TD075BHNS001	DT-26	206	32.768k	7.5PF
KDS	1TD075BHNS001	DT-26	206	32.768k	7.5PF
KDS	1TD125BFNS001	DT-26	206	32.768k	12.5PF
KDS	1TD1001HNS001	DT-26	206	32.768k	10.0PF
KDS	1TD1250HNS005	DT-26	206	32.768k	12.5PF
KDS	1TC125DFNS030	DT-38	308	32.768k	12.5PF
KDS	1TC125NFNS002	DT-38	308	32.768k	12.5PF
KDS	1TC125AFSS003	DT-38	308	32.768k	12.5PF
KDS	1TC250E65	DT-38	308	32.768k	12.5PF
KDS	1TC125JHNS001	DT-38	308	32.768KHZ	12.5PF
KDS	1TC125JHNS001	DT-38	308	32.768KHZ	12.5PF
KDS	1TC070DFNS012	DT-38	308	32.768KHZ	7PF
KDS	1TD060DHNS006	DT-26	206	32.768KHZ	6PF
KDS	KDS圓柱石英晶振	DT-38	308	32.768KHZ	12.5PF
KDS	1TJS060DJ4A739Q	DMX-26S	8038	32.768K	6PF
KDS	1ZZHAM24000BB0B	DSX1612S	1612	24.000M
KDS	1ZZHAM26000AB0A	DSX1612S	1612	26.000M
KDS	1ZZCAA24000BE0B	DSX211G	2016	24.000M	10PF
KDS	1ZZCAA27120BB0D	DSX211G	2016	27.12M	10PF
KDS	1ZZCAA27120CD0A	DSX211G	2016	27.12M
KDS	1ZZNAE26000AB0J	DSX211SH	2016	26.000M	7PF
KDS	1ZZNAE26000AB0J	DSX211SH	2016	26.000M	7PF
KDS	1ZCP37400AA0H	DSX211AL	2016	37.400M
KDS	1ZZNAE38400AA0C	DSX211SH	2016	38.400M
KDS	1ZZNAE48000ZZ0R	DSX211SH	2016	48.000M	7PF
KDS	7AE01200A00A000000I	DSX221G	2520	12.000M	8PF
KDS	1ZNA16000AB0P	DSX221G	2520	16.000M	9PF
KDS	1ZCB26000AB0R	DSX221G	2520	26.000M
KDS	1ZNA32000BB0B	DSX221G	2520	32.000M	12PF
KDS	1ZC13727	DSX221SH	2520	24.000M	10PF
KDS	1ZN326000AB0A	DSX221SH	2520	26.000M	7PF
KDS	1ZN326000AB0A	DSX221SH	2520	26.000M	7PF
KDS	1C208000BC0R	DSX321G	3225	8.000M	12PF
KDS	1C208000CE0H	DSX321G	3225	8.000M	10PF
KDS	1C208000EE0BL	DSX321G	3225	8.000M	12PF
KDS	17AD00800A1C	DSX321G	3225	8.000M	12PF
KDS	1ZCM080000EE0A	DSX320G	3225	8.000M	8PF
KDS	1C210000EK0C	DSX321G	3225	10.000M
KDS	17AD01200A1R	DSX321G	3225	12.000M
KDS	1C214745CE0E	DSX321G	3225	14.7456M

這表明遷移率的提高不僅取決于效應(yīng),還存在其他影響電學性能的機制.相比于傳統(tǒng)基于無序半導體材料的場效應(yīng)晶體管中摻雜引起的缺陷鈍化現(xiàn)象,由有序單晶荷轉(zhuǎn)移界面制備的場效應(yīng)晶體管不僅整體電導、深圳進口晶振代理商遷移率高,還具有跨導不依賴于柵壓的電學特性,這表明遷移率的提高不僅取決于效應(yīng),還存在其他影響電學性能的機制.近日所微電子器件與集成技術(shù)重點實驗室在有機分子晶體器件的載流子輸運研究方向取得重要進展.

日本KDS晶振,Y1XVD008192VB有源晶振編碼,石英晶振型號DSV321SV 3225 8.19M