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SG-8002CA LB CE LA 26.0000M-PCM可編程MEMS振蕩器硅振蕩器MEMS oscillator

可編程的硅振蕩器中文名MEMS振蕩器外文名MEMS oscillator

MEMS振蕩器是指通過微機電系統(tǒng)制作出的一種可編程的硅振蕩器.

產(chǎn)品原理傳統(tǒng)的石英振蕩器是由壓電石英加上簡單的起振芯片和金屬封裝組成的,其生產(chǎn)工藝包括：石英切割鍍銀、購買基座、起振芯片,愛普生晶振以及將石英及芯片以特殊黏膠結(jié)合后至于基座上,然后充填氮氣,用金屬封裝進行密封.而不同頻率、不同工作電壓振蕩器的產(chǎn)生,則是由石英的不同形狀、鍍銀厚度及所佩的起振芯片所決定.所以,從生產(chǎn)工藝角度,石英產(chǎn)業(yè)是一個人工密集型的半自動化傳統(tǒng)產(chǎn)業(yè),其產(chǎn)品也受到傳統(tǒng)原材料和工藝的限制：

SG-8002CA LB CE LA 26.0000M-PCM晶振,可編程晶振,硅振蕩器MEMS振蕩器

1.復(fù)雜的生產(chǎn)程序?qū)е鹿┴浧诘耐祥L及缺貨應(yīng)急困難的現(xiàn)象；

2.不同振蕩器規(guī)格需不同原料不同工藝,從而使成品缺乏靈活性,無法為滿足不同應(yīng)用而進行實時配置；

3.壓電石英對溫度敏感度高的特性,造成有源晶振石英振蕩器的溫飄煩惱；

4.石英易碎怕摔老化的弱點需靠生產(chǎn)工藝和質(zhì)量管理來解決,缺乏質(zhì)量和長期可靠性的一致性.

為解決石英的內(nèi)在弱點,因此在時鐘組件的選料上開始轉(zhuǎn)向采用了全硅的產(chǎn)品結(jié)構(gòu),有一個全硅MEMS諧振器和一個可編程Analog CMOS驅(qū)動芯片堆棧,并以標準QFNIC封裝方式完成.

SG-8002CA LB CE LA 26.0000M-PCM晶振,可編程晶振,硅振蕩器MEMS振蕩器

SG-8002CA Series (7.0 mm x 5.0 mm x 1.4 mm)
制造商零件編號	描述
SG-8002CA-PHB	XTAL OSC PROG XO CMOS 5V 50PPM
SG-8002CA-PHC	XTAL OSC PROG XO CMOS 5V 100PPM
SG-8002CA-PTB	XTAL OSC PROG XO TTL 5V 50PPM
SG-8002CA-PTC	XTAL OSC PROG XO TTL 5V 100PPM
SG-8002CA-SHB	XTAL OSC PROG XO CMOS 5V 50PPM
SG-8002CA-SHC	XTAL OSC PROG XO CMOS 5V 100PPM
SG-8002CA-STB	XTAL OSC PROG XO TTL 5V 50PPM
SG-8002CA-STC	XTAL OSC PROG XO TTL 5V 100PPM
SG-8002CA-PCB	XTAL OSC PROG XO CMOS 3.3V 50PPM
SG-8002CA-PCC	XTAL OSC PRG XO CMOS 3.3V 100PPM
SG-8002CA-SCB	XTAL OSC PROG XO CMOS 3.3V 50PPM
SG-8002CA-SCC	XTAL OSC PRG XO CMOS 3.3V 100PPM
SG-8002CA-PCM	XTAL OSC PRG XO CMOS 3.3V 100PPM
SG-8002CA-SCM	XTAL OSC PRG XO CMOS 3.3V 100PPM
SG-8002CA-PHM	XTAL OSC PROG XO CMOS 5V 100PPM
SG-8002CA-PTM	XTAL OSC PROG XO TTL 5V 100PPM
SG-8002CA-SHM	XTAL OSC PROG XO CMOS 5V 100PPM
SG-8002CA-STM	XTAL OSC PROG XO TTL 5V 100PPM
SGR-8002DC Series (13.7 mm x 7.6 mm x 5.3 mm)
制造商零件編號	描述
SGR-8002DC-PHB	XTAL OSC PROG XO CMOS 5V 50PPM
SGR-8002DC-PHC	XTAL OSC PROG XO CMOS 5V 100PPM
SGR-8002DC-PTB	XTAL OSC PROG XO TTL 5V 50PPM
SGR-8002DC-PTC	XTAL OSC PROG XO TTL 5V 100PPM
SGR-8002DC-SHB	XTAL OSC PROG XO CMOS 5V 50PPM
SGR-8002DC-SHC	XTAL OSC PROG XO CMOS 5V 100PPM
SGR-8002DC-STB	XTAL OSC PROG XO TTL 5V 50PPM
SGR-8002DC-STC	XTAL OSC PROG XO TTL 5V 100PPM
SGR-8002DC-PCB	XTAL OSC PROG XO CMOS 3.3V 50PPM
SGR-8002DC-PCC	XTAL OSC PRG XO CMOS 3.3V 100PPM
SGR-8002DC-SCB	XTAL OSC PROG XO CMOS 3.3V 50PPM
SGR-8002DC-SCC	XTAL OSC PRG XO CMOS 3.3V 100PPM
SGR-8002DC-SCM	XTAL OSC PRG XO CMOS 3.3V 100PPM
SGR-8002DC-PCM	XTAL OSC PRG XO CMOS 3.3V 100PPM
SGR-8002DC-PHM	XTAL OSC PROG XO CMOS 5V 100PPM
SGR-8002DC-PTM	XTAL OSC PROG XO TTL 5V 100PPM
SGR-8002DC-SHM	XTAL OSC PROG XO CMOS 5V 100PPM
SGR-8002DC-STM	XTAL OSC PROG XO TTL 5V 100PPM

產(chǎn)品介紹MEMS振蕩器是指通過微機電系統(tǒng)制作出的一種可編程的硅振蕩器,屬于我們通常所說的有源晶振.它是對傳統(tǒng)石英晶振產(chǎn)品的一個升級更新?lián)Q代,防震效果是前者的25倍,具有不受振動影響、不易碎的特點.MEMS振蕩器的溫度穩(wěn)定性也比傳統(tǒng)晶振更好,不受環(huán)境溫度高低變化的影響.

SG-8002系列可編程晶體振蕩器

Epson的SG-8002系列可編程晶體振蕩器提供多種行業(yè)標準封裝和引腳布局差分晶振

Epson的SG-8002是業(yè)內(nèi)首批能在極短的提前期內(nèi)從幾個樣品快速轉(zhuǎn)換到大批量生產(chǎn)的可編程晶體振蕩器之一.SG-8002系列提供CMOS或TTL輸出,采用3.0V、3.3V或5.0V電源供電.該器件可在1MHz至125MHz范圍內(nèi)編程,并且振蕩器可根據(jù)訂單要求,在-20°C至+70°C或者-40°C至+85°C溫度范圍內(nèi)具有±50ppm或者±100ppm的精度.SG-8002可采用多種行業(yè)標準封裝和標準引腳布局.

特性

頻率范圍：1MHz至125MHz

電源電壓：3.0V/3.3V/5.0V

功能：輸出使能(OE)或者待機(ST)

采用PLL技術(shù)縮短大規(guī)模生產(chǎn)的提前期

貼片晶振應(yīng)用

音頻/視頻

測試和儀器

自動化

便攜式醫(yī)療器械

打印機/復(fù)印機

ATE

電梯

HVACSG-8002CA LB CE LA 26.0000M-PCM晶振,可編程晶振,硅振蕩器MEMS振蕩器

編碼	型號	頻率	尺寸	輸出方式	電源電壓	工作溫度	頻率偏差
X1G0051810011	SG-8101CG	48.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810013	SG-8101CG	66.666660 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810014	SG-8101CG	24.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810015	SG-8101CG	100.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810016	SG-8101CG	16.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810017	SG-8101CG	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810018	SG-8101CG	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810019	SG-8101CG	1.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810020	SG-8101CG	80.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810021	SG-8101CG	58.982400 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0051810022	SG-8101CG	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810023	SG-8101CG	40.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810024	SG-8101CG	50.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810025	SG-8101CG	16.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810030	SG-8101CG	39.321600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0051810031	SG-8101CG	31.250000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810033	SG-8101CG	12.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810034	SG-8101CG	8.192000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810035	SG-8101CG	5.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810036	SG-8101CG	96.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810037	SG-8101CG	49.152000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810043	SG-8101CG	1.544000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810047	SG-8101CG	2.048000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051810048	SG-8101CG	35.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0051910012	SG-8101CA	60.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0051910024	SG-8101CA	5.560000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0051910026	SG-8101CA	13.516800 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0051910027	SG-8101CA	25.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051910030	SG-8101CA	98.304000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0051910031	SG-8101CA	10.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0051910033	SG-8101CA	40.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052010011	SG-8101CB	133.000000 MHz	5.00 x 3.20 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0052010017	SG-8101CB	24.545400 MHz	5.00 x 3.20 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052010018	SG-8101CB	28.636400 MHz	5.00 x 3.20 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052010020	SG-8101CB	153.600000 MHz	5.00 x 3.20 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0052110011	SG-8101CE	25.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110016	SG-8101CE	40.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110017	SG-8101CE	12.500000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0052110018	SG-8101CE	25.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0052110019	SG-8101CE	10.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0052110020	SG-8101CE	100.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110021	SG-8101CE	80.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110022	SG-8101CE	48.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110023	SG-8101CE	25.000500 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110025	SG-8101CE	125.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110033	SG-8101CE	27.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110034	SG-8101CE	3.686400 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110035	SG-8101CE	88.888800 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0052110037	SG-8101CE	70.047536 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110038	SG-8101CE	60.787000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110041	SG-8101CE	32.768000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110042	SG-8101CE	1.544000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110044	SG-8101CE	114.285000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0052110045	SG-8101CE	50.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-20 ppm
X1G0055710011	SG-8018CA	25.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710012	SG-8018CA	25.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710013	SG-8018CA	20.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710014	SG-8018CA	20.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710015	SG-8018CA	50.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710016	SG-8018CA	50.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710017	SG-8018CA	48.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710018	SG-8018CA	48.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710019	SG-8018CA	24.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710020	SG-8018CA	24.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710021	SG-8018CA	40.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710022	SG-8018CA	40.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710023	SG-8018CA	16.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710024	SG-8018CA	16.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710025	SG-8018CA	12.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710026	SG-8018CA	12.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710027	SG-8018CA	10.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710028	SG-8018CA	10.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710029	SG-8018CA	27.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710030	SG-8018CA	27.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710031	SG-8018CA	32.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710032	SG-8018CA	32.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710033	SG-8018CA	8.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710034	SG-8018CA	8.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710035	SG-8018CA	14.745600 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710036	SG-8018CA	14.745600 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710037	SG-8018CA	12.288000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710038	SG-8018CA	12.288000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710039	SG-8018CA	33.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710040	SG-8018CA	33.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710041	SG-8018CA	30.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710042	SG-8018CA	30.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm
X1G0055710043	SG-8018CA	26.000000 MHz	7.00 x 5.00 x 1.40 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm

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愛普生SG-8018CB可編程晶振X1G005581011600具有極好的抗震性能

愛普生晶振為開發(fā)和型號替換用戶提供SG-8018系列X1G005591027900可編程石英晶振