規(guī)格:
頻率范圍:10MHz至54MHz有源晶振
電源電壓:典型值3.3V。
工作溫度:-40℃至+85℃(+105℃選項)
頻率/溫度特性:±0.28x10-6。溫度過高
頻率斜率:±0.2x10-6/ C最大。溫度過高
頻率老化:±3.0x10-6。/ 20年(符合Stratum3)
小體積尺寸封裝:5.0x3.2x1.45mm(10腳貼片晶振)
應(yīng)用程序:網(wǎng)絡(luò)設(shè)備,基站,微波爐,同步合規(guī)標準,Stratum3,同步,IEEE1588
TG-5510CB溫補晶振X1G006061009514用于5G室外基站控制器
石英晶振 |
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TG-5510CB | 25.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006061004814 | TG-5510CB | 50.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006061007614 | TG-5510CB | 30.720000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061008214 | TG-5510CB | 38.400000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009014 | TG-5510CB | 25.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009214 | TG-5510CB | 25.600000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009414 | TG-5510CB | 12.800000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009514 | TG-5510CB | 20.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009714 | TG-5510CB | 50.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009814 | TG-5510CB | 10.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
TG-5510CB溫補晶振X1G006061009514用于5G室外基站控制器
溫補晶振即溫度補償晶體振蕩器(TCXO),本身具有溫度補償作用,是通過附加的溫度補償電路使由周圍溫度變化產(chǎn)生的振蕩頻率變化量削減的一種石英晶體振蕩器,高低溫度穩(wěn)定性:頻率精度0.5PPM~2.0PPM,常用頻率:26M,33.6M,38.4M,40M.因產(chǎn)品性能穩(wěn)定,精度高等優(yōu)勢,被廣泛應(yīng)用到一些比較高端的數(shù)碼通訊產(chǎn)品領(lǐng)域,GPS全球定位系統(tǒng),智能手機,WiMAX和無線通信等產(chǎn)品,符合RoHS/無鉛.