蘋(píng)果手機(jī)藍(lán)牙專(zhuān)用晶振SG-8018CE愛(ài)普生有源晶振編碼X1G005591001900
蘋(píng)果手機(jī)藍(lán)牙專(zhuān)用晶振SG-8018CE愛(ài)普生有源晶振編碼X1G005591001900
手機(jī)藍(lán)牙耳機(jī)博通集成BK3288恒玄科技BES2000山景集成電路BP1048B2博通集成BK3288是一款28nm工藝、高性能雙核、低功耗的藍(lán)牙5.0雙模音頻芯片,愛(ài)普生晶振其特性如下:1.-94dBm射頻接收靈敏度,10dBm發(fā)射功率;2.專(zhuān)用音頻DSP,支持浮點(diǎn)和每秒1G次數(shù)的16bit*16bit乘加運(yùn)算能力;3.極低的待機(jī)和工作功耗,藍(lán)牙耳機(jī)模式下A2DP功耗小于4mA;4.支持2.4GHz私有協(xié)議、2Mbps速率和長(zhǎng)包模式,支持低延遲私有音頻解決方案;5.96dB的音頻ADC和102dB的音頻DAC,采樣率8kHz~384kHz;6.微秒級(jí)別的ADC和DAC延遲支持寬頻帶的主動(dòng)降噪;7.單芯片同時(shí)支持主動(dòng)降噪、陣列麥克風(fēng)降噪、聲學(xué)回聲消除和人工智能語(yǔ)音助手CU控制接口.
SG-8018CE愛(ài)普生有源晶振編碼X1G005591001900,蘋(píng)果手機(jī)藍(lán)牙專(zhuān)用晶振
愛(ài)普生有源晶振編碼 | 型號(hào) | 頻率 | 長(zhǎng)X寬X高 | 輸出波 | 電源電壓 | 工作溫度 | 頻差 |
X1G005591001100 | SG-8018CE | 25.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001200 | SG-8018CE | 25.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001300 | SG-8018CE | 20.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001400 | SG-8018CE | 20.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001500 | SG-8018CE | 50.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001600 | SG-8018CE | 50.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001700 | SG-8018CE | 48.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001800 | SG-8018CE | 48.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001900 | SG-8018CE | 24.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002000 | SG-8018CE | 24.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002100 | SG-8018CE | 40.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002200 | SG-8018CE | 40.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002300 | SG-8018CE | 16.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002400 | SG-8018CE | 16.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002500 | SG-8018CE | 12.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002600 | SG-8018CE | 12.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002700 | SG-8018CE | 10.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002800 | SG-8018CE | 10.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002900 | SG-8018CE | 27.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003000 | SG-8018CE | 27.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003100 | SG-8018CE | 32.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003200 | SG-8018CE | 32.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003300 | SG-8018CE | 8.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003400 | SG-8018CE | 8.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
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