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X1G0041710197 SG-210STF 2520 24MHZ -40+105℃ EPSON 比亞迪和長城汽車車規(guī)溫度晶振重要性

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掃一掃!X1G0041710197 SG-210STF 2520 24MHZ -40+105℃ EPSON 比亞迪和長城汽車車規(guī)溫度晶振重要性掃一掃!
瀏覽:- 發(fā)布日期:2023-05-30 11:13:44【
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X1G0041710197 SG-210STF 2520 24MHZ -40+105 EPSON 比亞迪和長城汽車車規(guī)溫度晶振重要性

關(guān)于插電混動車排放問題,比亞迪和長城汽車隔空開仗經(jīng)濟(jì)大環(huán)境不好的光景下,所有行業(yè)都那么卷.芯片行業(yè)、手機(jī)行業(yè)、汽車行業(yè)……根據(jù)平臺的數(shù)據(jù),在2016年環(huán)境保護(hù)部與國家質(zhì)量監(jiān)督檢驗(yàn)檢疫總局聯(lián)合發(fā)布的《輕型汽車污染物排放限值及測量方法(中國第六階段)》(GB18352.6—2016)標(biāo)準(zhǔn)于2020年7月1日生效后,中國電動汽車正在大幅增長——大約100個(gè)品牌提供了300多個(gè)車型,愛普生晶振因此中國國內(nèi)電動汽車市場的競爭也很“卷”且微妙.最近兩大國內(nèi)汽車巨頭,竟然在網(wǎng)上隔空打起了“嘴仗”.長城汽車開炮:比亞迪多款車型污染物排放不達(dá)標(biāo)比亞迪還表示,比亞迪作為全球第一家提出插電式混合動力汽車產(chǎn)品的企業(yè),在插混技術(shù)上有二十多年的積累和迭代,不像有的同行想得那么簡單.

日本愛普生XO有源晶振,OSC晶體振蕩器X1G0041710197 SG-210STF 2520 24MHZ -40+105℃車規(guī)寬溫耐高溫晶振

QQ截圖20230530095842

比亞迪呼吁希望大家多做有益于行業(yè),有益于中國品牌的事情.比亞迪方面表示,“經(jīng)了解,長城所說的情況,測試車輛由長城購買、車載級晶振保管并安排送檢,中汽中心(天津)按長城的要求進(jìn)行了相關(guān)項(xiàng)目的檢測.測試車輛嚴(yán)格來說,不符合國標(biāo)要求的送檢狀態(tài),即應(yīng)由第三方抽樣、保管及送檢,并要求完成3000公里磨合后測試,而長城送檢的車輛在檢測時(shí),里程僅為450-670公里.鑒于以上,我們認(rèn)為其檢測報(bào)告無效,長城不能以此作為依據(jù)!我們的產(chǎn)品及相關(guān)檢測符合國家標(biāo)準(zhǔn),在國家權(quán)威機(jī)構(gòu)通過認(rèn)證.我們歡迎有關(guān)部門隨時(shí)過來調(diào)查、取證和檢測.”

比亞迪回應(yīng):多做實(shí)事,少搞不正當(dāng)競爭5月25日中午12時(shí)許,比亞迪針對長城汽車的舉報(bào)做出官方回應(yīng).“我們堅(jiān)決反對任何形式的不正當(dāng)競爭行為!并保留法務(wù)訴訟的權(quán)力!”長城汽車副總裁傅小康表示,本應(yīng)該是報(bào)團(tuán)取暖的階段,卻有人打著冠冕堂皇的旗號,侵蝕著來之不易的沃土.特別是在各類社交媒體平臺上,長期存在著一些不良之風(fēng).因此,他呼吁,汽車行業(yè)經(jīng)營主體、汽車行業(yè)從業(yè)者,深圳進(jìn)口晶振代理商以及更多同行團(tuán)結(jié)起來,抵御網(wǎng)絡(luò)不正之風(fēng).目前長城汽車正在密切關(guān)注該案的立案及處理進(jìn)展.5月25日,長城汽車發(fā)布公告稱,2023年4月11日,長城汽車向生態(tài)環(huán)境部、國家市場監(jiān)督管理總局、工業(yè)和信息化部遞交舉報(bào)材料,就比亞迪秦PLUSDM-i(產(chǎn)品型號:BYD7152WT6HEVC2)、宋PLUSDM-i(產(chǎn)品型號BYD6470ST6HEV2)采用常壓油箱,涉嫌整車蒸發(fā)污染物排放不達(dá)標(biāo)的問題進(jìn)行舉報(bào).日本愛普生XO有源晶振,OSC晶體振蕩器X1G0041710197 SG-210STF 2520 24MHZ -40+105℃車規(guī)寬溫耐高溫晶振

晶振型號 尺寸 輸出 輸出頻率 電源電壓 頻率公差
[ 毫米 ] 范圍[ MHz ] [ V ] 典型值。 工作溫度
[ x10^-6 / °C 至 °C ]
SG-210STF 2.5×2.0 CMOS 20個(gè)標(biāo)準(zhǔn)頻率 1.8 至 3.3 +/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG2016CAA 2.0×1.6 CMOS 1.2 至 75 1.8 至 3.3 +/-50 / -40 至 +105
(AEC-Q200) +/-100 / -40 至 +125
(+/-50 / -40 至 +85)
(+/-100 / -40 至 +105)
SG2016CAN 2.0×1.6 CMOS 20個(gè)標(biāo)準(zhǔn)頻率 1.8 至 3.3 +/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG2016EGN 2.0×1.6 低壓PECL 25 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2016EHN 2.0×1.6 低壓PECL 25 至 500 2.5 +/- 20 / -40 至 +85
3.3 +/- 20 / -40 至 +105
SG2016HGN 2.0×1.6 HCSL 25 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2016HHN 2.0×1.6 HCSL 25 至 500 2.5 +/- 20 / -40 至 +85
3.3 +/- 20 / -40 至 +105
SG2016VGN 2.0×1.6 LVDS 25 至 500 1.8 +/-25 / -40 至 +85
2.5 +/-50 / -40 至 +85
3.3 +/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2016VHN 2.0×1.6 LVDS 25 至 500 1.8 +/- 20 / -40 至 +85
2.5 +/- 20 / -40 至 +105
3.3
SG2520CAA 2.5×2.0 CMOS 1 至 75 1.8 至 3.3 +/-50 / -40 至 +105
(AEC-Q200) +/-100 / -40 至 +125
(+/-50 / -40 至 +85)
(+/-100 / -40 至 +105)
SG2520EGN 2.5×2.0 低壓PECL 25 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2520EHN 2.5×2.0 低壓PECL 25 至 500 2.5 +/- 20 / -40 至 +85
3.3 +/- 20 / -40 至 +105
SG2520HGN 2.5×2.0 HCSL 25 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2520HHN 2.5×2.0 HCSL 25 至 500 2.5 +/- 20 / -40 至 +85
3.3 +/- 20 / -40 至 +105
SG2520VGN 2.5×2.0 LVDS 25 至 500 1.8 +/-25 / -40 至 +85
2.5 +/-50 / -40 至 +85
3.3 +/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2520VHN 2.5×2.0 LVDS 25 至 500 1.8 +/- 20 / -40 至 +85
2.5 +/- 20 / -40 至 +105
3.3
SG3225CAN 3.2×2.5 CMOS 20個(gè)標(biāo)準(zhǔn)頻率 1.8 至 3.3 +/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG3225EAN 3.2×2.5 低壓PECL 73.5 至 700 2.5 至 3.3 +/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG3225ECN 3.2×2.5 低壓PECL 25 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG3225HBN 3.2×2.5 HCSL 100 至 325 2.5 +/-50 / -40 至 +85
3.3 (包括 10 年老化)
+/-100 / -40 至 +85
(包括 10 年老化)
+/-100 / -40 至 +105
(包括 10 年老化)
SG3225VAN 3.2×2.5 LVDS(VAN) 73.5 至 700 2.5 至 3.3 +/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG3225VEN 3.2×2.5 LVDS 25 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG5032CAN 5.0 x 3.2 CMOS 20個(gè)標(biāo)準(zhǔn)頻率 1.8 至 3.3 +/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG5032CCN 5.0 x 3.2 CMOS 2.5 至 50 5 +/-50 / -20 至 +70
+/-50 / -40 至 +85
SG5032EAN 5.0 x 3.2 低壓PECL 73.5 至 700 2.5 至 3.3 +/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG5032ECN 5.0 x 3.2 低壓PECL 200.1 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG5032 5.0 x 3.2 LVDS(VAN) 73.5 至 700 2.5 至 3.3 +/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG5032VEN 5.0 x 3.2 LVDS 200.1 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG7050CAN 7.0 x 5.0 CMOS 20個(gè)標(biāo)準(zhǔn)頻率 1.8 至 3.3 +/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG7050CCN 7.0 x 5.0 CMOS 2.5 至 50 5 +/-50 / -20 至 +70
+/-50 / -40 至 +85
SG7050EAN 7.0 x 5.0 低壓PECL 73.5 至 700 2.5 至 3.3 +/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG7050ECN 7.0 x 5.0 低壓PECL 25 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG7050 7.0 x 5.0 低壓差分 (VAN) 73.5 至 700 2.5 至 3.3 +/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG7050VEN 7.0 x 5.0 LVDS 25 至 500 2.5 +/-25 / -40 至 +85
3.3 +/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105

隨后比亞迪進(jìn)行了回應(yīng)今年3月11日,長城汽車在長達(dá)52分鐘的“智能新能源干貨大會”上,特別拿出10多分鐘時(shí)間向行業(yè)發(fā)起倡議,呼吁攜手凈化網(wǎng)絡(luò)傳播環(huán)境,并開啟“1000萬懸賞計(jì)劃”.5月25日10點(diǎn)40分,長城汽車發(fā)布公告稱,2023年4月11日,長城汽車向生態(tài)環(huán)境部、國家市場監(jiān)督管理總局、工業(yè)和信息化部遞交舉報(bào)材料,就比亞迪秦PLUSDM-i(產(chǎn)品型有源晶振XO振蕩器OSCS石英晶振號:BYD7152WT6HEVC2)、宋PLUSDM-i(產(chǎn)品型號BYD6470ST6HEV2)采用常壓油箱,涉嫌整車蒸發(fā)污染物排放不達(dá)標(biāo)的問題進(jìn)行舉報(bào).日本愛普生XO有源晶振,OSC晶體振蕩器X1G0041710197 SG-210STF 2520 24MHZ -40+105℃車規(guī)寬溫耐高溫晶振

編碼 Model/型號 Frequency/頻率 LxWxH/尺寸 Output Wave/輸出方式 Supply Voltage/電源電壓 Ope Temperature/工作溫度 Freq. Tol./頻率偏差
X1G0041710059 SG-210STF 25.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710069 SG-210STF 8.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710075 SG-210STF 33.333300 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710126 SG-210STF 50.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710127 SG-210STF 32.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710128 SG-210STF 4.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-100 ppm
X1G0041710146 SG-210STF 6.780000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710147 SG-210STF 13.560000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710152 SG-210STF 27.120000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710153 SG-210STF 1.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710154 SG-210STF 16.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710155 SG-210STF 8.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-100 ppm
X1G0041710159 SG-210STF 9.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710192 SG-210STF 54.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710197 SG-210STF 24.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710198 SG-210STF 16.384000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710199 SG-210STF 66.666700 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.200 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710201 SG-210STF 48.896000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710203 SG-210STF 48.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710204 SG-210STF 48.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-100 ppm
X1G0041710206 SG-210STF 40.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710232 SG-210STF 66.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.200 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710238 SG-210STF 20.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710239 SG-210STF 75.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.200 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710242 SG-210STF 32.768000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710244 SG-210STF 26.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710250 SG-210STF 27.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710251 SG-210STF 66.666600 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.200 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710257 SG-210STF 30.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710263 SG-210STF 18.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710266 SG-210STF 1.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-100 ppm
X1G0041710268 SG-210STF 2.048000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-100 ppm
X1G0041710269 SG-210STF 4.096000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710280 SG-210STF 12.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710281 SG-210STF 33.333000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710282 SG-210STF 36.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710288 SG-210STF 16.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-100 ppm
X1G0041710294 SG-210STF 2.457600 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710298 SG-210STF 33.333333 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710299 SG-210STF 4.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710300 SG-210STF 33.330000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0041710304 SG-210STF 10.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 3.600 V -40 to 105 °C +/-50 ppm
X1G0044510026 SG5032CAN 25.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510036 SG5032CAN 50.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0044510109 SG5032CAN 33.333300 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510110 SG5032CAN 66.666600 MHz 5.00 x 3.20 x 1.30 mm CMOS 2.250 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510111 SG5032CAN 48.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510118 SG5032CAN 5.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510129 SG5032CAN 8.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510136 SG5032CAN 6.500000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510160 SG5032CAN 40.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510161 SG5032CAN 20.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510162 SG5032CAN 30.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510163 SG5032CAN 14.745600 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510164 SG5032CAN 33.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510165 SG5032CAN 19.660800 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044510178 SG5032CAN 10.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0044510180 SG5032CAN 75.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 2.250 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0044510181 SG5032CAN 74.250000 MHz 5.00 x 3.20 x 1.30 mm CMOS 2.250 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0044510182 SG5032CAN 7.372800 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0044510184 SG5032CAN 24.000000 MHz 5.00 x 3.20 x 1.30 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044810139 SG7050CAN 10.000000 MHz 7.00 x 5.00 x 1.50 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044810209 SG7050CAN 48.000000 MHz 7.00 x 5.00 x 1.50 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044810214 SG7050CAN 2.457600 MHz 7.00 x 5.00 x 1.50 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044810229 SG7050CAN 3.686400 MHz 7.00 x 5.00 x 1.50 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044810237 SG7050CAN 14.745600 MHz 7.00 x 5.00 x 1.50 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044810238 SG7050CAN 16.000000 MHz 7.00 x 5.00 x 1.50 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0044810240 SG7050CAN 7.372800 MHz 7.00 x 5.00 x 1.50 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G004591A001 SG-210SCBA 27.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A002 SG-210SCBA 49.090000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A004 SG-210SCBA 8.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A009 SG-210SCBA 20.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A024 SG-210SCBA 25.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A031 SG-210SCBA 25.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-100 ppm
X1G004591A036 SG-210SCBA 33.333300 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A037 SG-210SCBA 14.745600 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A040 SG-210SCBA 24.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A041 SG-210SCBA 16.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A042 SG-210SCBA 26.973027 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A044 SG-210SCBA 54.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A049 SG-210SCBA 24.576000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-100 ppm
X1G004591A050 SG-210SCBA 22.579200 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A060 SG-210SCBA 10.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A061 SG-210SCBA 11.059200 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A065 SG-210SCBA 33.300000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A066 SG-210SCBA 5.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A068 SG-210SCBA 12.288000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A071 SG-210SCBA 6.790000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-100 ppm
X1G004591A073 SG-210SCBA 30.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A074 SG-210SCBA 26.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A075 SG-210SCBA 38.400000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A076 SG-210SCBA 50.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004591A077 SG-210SCBA 7.904000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.700 to 3.600 V -40 to 105 °C +/-50 ppm
X1G004601A004 SG-210SDBA 16.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.200 to 3.000 V -40 to 105 °C +/-100 ppm
X1G004601A008 SG-210SDBA 12.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.200 to 3.000 V -40 to 105 °C +/-50 ppm
X1G004601A010 SG-210SDBA 24.600000 MHz 2.50 x 2.00 x 0.90 mm CMOS 2.200 to 3.000 V -40 to 105 °C +/-50 ppm
X1G004611A002 SG-210SEBA 19.200000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 2.200 V -40 to 105 °C +/-100 ppm
X1G004611A005 SG-210SEBA 27.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 2.200 V -40 to 105 °C +/-50 ppm
X1G004611A006 SG-210SEBA 26.973027 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 2.200 V -40 to 105 °C +/-50 ppm
X1G004611A007 SG-210SEBA 37.500000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 2.200 V -40 to 105 °C +/-50 ppm
X1G004611A011 SG-210SEBA 40.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 2.200 V -40 to 105 °C +/-100 ppm
X1G004611A012 SG-210SEBA 24.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 2.200 V -40 to 105 °C +/-100 ppm
X1G004611A016 SG-210SEBA 14.000000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 2.200 V -40 to 105 °C +/-50 ppm
X1G004611A017 SG-210SEBA 37.125000 MHz 2.50 x 2.00 x 0.90 mm CMOS 1.600 to 2.200 V -40 to 105 °C +/-50 ppm
X1G0048010018 SG2016CAN 20.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0048010021 SG2016CAN 27.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0048010022 SG2016CAN 40.000000 MHz 2.00 x 1.60 x 0.70 mm CMOS 1.600 to 3.630 V -40 to 105 °C +/-100 ppm
X1G0051810011 SG-8101CG 48.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810013 SG-8101CG 66.666660 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810014 SG-8101CG 24.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810015 SG-8101CG 100.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810016 SG-8101CG 16.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810017 SG-8101CG 25.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810018 SG-8101CG 25.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810019 SG-8101CG 1.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810020 SG-8101CG 80.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810021 SG-8101CG 58.982400 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051810022 SG-8101CG 25.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810023 SG-8101CG 40.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810024 SG-8101CG 50.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810025 SG-8101CG 16.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810030 SG-8101CG 39.321600 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051810031 SG-8101CG 31.250000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810033 SG-8101CG 12.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810034 SG-8101CG 8.192000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810035 SG-8101CG 5.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810036 SG-8101CG 96.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810037 SG-8101CG 49.152000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810043 SG-8101CG 1.544000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810047 SG-8101CG 2.048000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810048 SG-8101CG 35.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910012 SG-8101CA 60.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910024 SG-8101CA 5.560000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910026 SG-8101CA 13.516800 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910027 SG-8101CA 25.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051910030 SG-8101CA 98.304000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051910031 SG-8101CA 10.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910033 SG-8101CA 40.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052010011 SG-8101CB 133.000000 MHz 5.00 x 3.20 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0052010017 SG-8101CB 24.545400 MHz 5.00 x 3.20 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
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日本愛普生XO有源晶振,OSC晶體振蕩器X1G0041710197 SG-210STF 2520 24MHZ -40+105℃車規(guī)寬溫耐高溫晶振

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