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SG-8002CA LB CE LA 26.0000M-PCM可編程MEMS振蕩器硅振蕩器MEMS oscillator

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SG-8002CA  LB  CE  LA 26.0000M-PCM可編程MEMS振蕩器硅振蕩器MEMS oscillator

可編程的硅振蕩器中文名MEMS振蕩器 外文名MEMS oscillator

MEMS振蕩器是指通過微機(jī)電系統(tǒng)制作出的一種可編程的硅振蕩器.

產(chǎn)品原理傳統(tǒng)的石英振蕩器是由壓電石英加上簡單的起振芯片和金屬封裝組成的,其生產(chǎn)工藝包括：石英切割鍍銀、購買基座、起振芯片,愛普生晶振以及將石英及芯片以特殊黏膠結(jié)合后至于基座上,然后充填氮?dú)?span>,用金屬封裝進(jìn)行密封.而不同頻率、不同工作電壓振蕩器的產(chǎn)生,則是由石英的不同形狀、鍍銀厚度及所佩的起振芯片所決定.所以,從生產(chǎn)工藝角度,石英產(chǎn)業(yè)是一個人工密集型的半自動化傳統(tǒng)產(chǎn)業(yè),其產(chǎn)品也受到傳統(tǒng)原材料和工藝的限制：

SG-8002CA LB CE LA 26.0000M-PCM晶振,可編程晶振,硅振蕩器MEMS振蕩器

QQ截圖20230608144635

1.復(fù)雜的生產(chǎn)程序?qū)е鹿┴浧诘耐祥L及缺貨應(yīng)急困難的現(xiàn)象；

2.不同振蕩器規(guī)格需不同原料不同工藝,從而使成品缺乏靈活性,無法為滿足不同應(yīng)用而進(jìn)行實(shí)時配置；

3.壓電石英對溫度敏感度高的特性,造成有源晶振石英振蕩器的溫飄煩惱；

4.石英易碎怕摔老化的弱點(diǎn)需靠生產(chǎn)工藝和質(zhì)量管理來解決,缺乏質(zhì)量和長期可靠性的一致性.

為解決石英的內(nèi)在弱點(diǎn),因此在時鐘組件的選料上開始轉(zhuǎn)向采用了全硅的產(chǎn)品結(jié)構(gòu),有一個全硅MEMS諧振器和一個可編程Analog CMOS驅(qū)動芯片堆棧,并以標(biāo)準(zhǔn)QFNIC封裝方式完成.

SG-8002CA LB CE LA 26.0000M-PCM晶振,可編程晶振,硅振蕩器MEMS振蕩器

SG-8002CA Series (7.0 mm x 5.0 mm x 1.4 mm)
制造商零件編號 描述
SG-8002CA-PHB XTAL OSC PROG XO CMOS 5V 50PPM
SG-8002CA-PHC XTAL OSC PROG XO CMOS 5V 100PPM
SG-8002CA-PTB XTAL OSC PROG XO TTL 5V 50PPM
SG-8002CA-PTC XTAL OSC PROG XO TTL 5V 100PPM
SG-8002CA-SHB XTAL OSC PROG XO CMOS 5V 50PPM
SG-8002CA-SHC XTAL OSC PROG XO CMOS 5V 100PPM
SG-8002CA-STB XTAL OSC PROG XO TTL 5V 50PPM
SG-8002CA-STC XTAL OSC PROG XO TTL 5V 100PPM
SG-8002CA-PCB XTAL OSC PROG XO CMOS 3.3V 50PPM
SG-8002CA-PCC XTAL OSC PRG XO CMOS 3.3V 100PPM
SG-8002CA-SCB XTAL OSC PROG XO CMOS 3.3V 50PPM
SG-8002CA-SCC XTAL OSC PRG XO CMOS 3.3V 100PPM
SG-8002CA-PCM XTAL OSC PRG XO CMOS 3.3V 100PPM
SG-8002CA-SCM XTAL OSC PRG XO CMOS 3.3V 100PPM
SG-8002CA-PHM XTAL OSC PROG XO CMOS 5V 100PPM
SG-8002CA-PTM XTAL OSC PROG XO TTL 5V 100PPM
SG-8002CA-SHM XTAL OSC PROG XO CMOS 5V 100PPM
SG-8002CA-STM XTAL OSC PROG XO TTL 5V 100PPM
SGR-8002DC Series (13.7 mm x 7.6 mm x 5.3 mm)
制造商零件編號 描述
SGR-8002DC-PHB XTAL OSC PROG XO CMOS 5V 50PPM
SGR-8002DC-PHC XTAL OSC PROG XO CMOS 5V 100PPM
SGR-8002DC-PTB XTAL OSC PROG XO TTL 5V 50PPM
SGR-8002DC-PTC XTAL OSC PROG XO TTL 5V 100PPM
SGR-8002DC-SHB XTAL OSC PROG XO CMOS 5V 50PPM
SGR-8002DC-SHC XTAL OSC PROG XO CMOS 5V 100PPM
SGR-8002DC-STB XTAL OSC PROG XO TTL 5V 50PPM
SGR-8002DC-STC XTAL OSC PROG XO TTL 5V 100PPM
SGR-8002DC-PCB XTAL OSC PROG XO CMOS 3.3V 50PPM
SGR-8002DC-PCC XTAL OSC PRG XO CMOS 3.3V 100PPM
SGR-8002DC-SCB XTAL OSC PROG XO CMOS 3.3V 50PPM
SGR-8002DC-SCC XTAL OSC PRG XO CMOS 3.3V 100PPM
SGR-8002DC-SCM XTAL OSC PRG XO CMOS 3.3V 100PPM
SGR-8002DC-PCM XTAL OSC PRG XO CMOS 3.3V 100PPM
SGR-8002DC-PHM XTAL OSC PROG XO CMOS 5V 100PPM
SGR-8002DC-PTM XTAL OSC PROG XO TTL 5V 100PPM
SGR-8002DC-SHM XTAL OSC PROG XO CMOS 5V 100PPM
SGR-8002DC-STM XTAL OSC PROG XO TTL 5V 100PPM
產(chǎn)品介紹MEMS振蕩器是指通過微機(jī)電系統(tǒng)制作出的一種可編程的硅振蕩器,屬于我們通常所說的有源晶振.它是對傳統(tǒng)石英晶振產(chǎn)品的一個升級更新?lián)Q代,防震效果是前者的25倍,具有不受振動影響、不易碎的特點(diǎn).MEMS振蕩器的溫度穩(wěn)定性也比傳統(tǒng)晶振更好,不受環(huán)境溫度高低變化的影響.

SG-8002系列可編程晶體振蕩器

Epson的SG-8002系列可編程晶體振蕩器提供多種行業(yè)標(biāo)準(zhǔn)封裝和引腳布局差分晶振

Epson的SG-8002是業(yè)內(nèi)首批能在極短的提前期內(nèi)從幾個樣品快速轉(zhuǎn)換到大批量生產(chǎn)的可編程晶體振蕩器之一.SG-8002系列提供CMOS或TTL輸出,采用3.0V、3.3V或5.0V電源供電.該器件可在1MHz至125MHz范圍內(nèi)編程,并且振蕩器可根據(jù)訂單要求,在-20°C至+70°C或者-40°C至+85°C溫度范圍內(nèi)具有±50ppm或者±100ppm的精度.SG-8002可采用多種行業(yè)標(biāo)準(zhǔn)封裝和標(biāo)準(zhǔn)引腳布局.

特性

頻率范圍：1MHz至125MHz

電源電壓：3.0V/3.3V/5.0V

功能：輸出使能(OE)或者待機(jī)(ST)

采用PLL技術(shù)縮短大規(guī)模生產(chǎn)的提前期

貼片晶振應(yīng)用

音頻/視頻

測試和儀器

自動化

便攜式醫(yī)療器械

打印機(jī)/復(fù)印機(jī)

ATE

電梯

HVAC SG-8002CA LB CE LA 26.0000M-PCM晶振,可編程晶振,硅振蕩器MEMS振蕩器

編碼 型號 頻率 尺寸 輸出方式 電源電壓 工作溫度 頻率偏差
X1G0051810011 SG-8101CG 48.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810013 SG-8101CG 66.666660 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810014 SG-8101CG 24.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810015 SG-8101CG 100.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810016 SG-8101CG 16.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810017 SG-8101CG 25.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810018 SG-8101CG 25.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810019 SG-8101CG 1.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810020 SG-8101CG 80.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810021 SG-8101CG 58.982400 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051810022 SG-8101CG 25.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810023 SG-8101CG 40.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810024 SG-8101CG 50.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810025 SG-8101CG 16.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810030 SG-8101CG 39.321600 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051810031 SG-8101CG 31.250000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810033 SG-8101CG 12.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810034 SG-8101CG 8.192000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810035 SG-8101CG 5.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810036 SG-8101CG 96.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810037 SG-8101CG 49.152000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810043 SG-8101CG 1.544000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810047 SG-8101CG 2.048000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051810048 SG-8101CG 35.000000 MHz 2.50 x 2.00 x 0.80 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910012 SG-8101CA 60.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910024 SG-8101CA 5.560000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910026 SG-8101CA 13.516800 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910027 SG-8101CA 25.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051910030 SG-8101CA 98.304000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0051910031 SG-8101CA 10.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0051910033 SG-8101CA 40.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052010011 SG-8101CB 133.000000 MHz 5.00 x 3.20 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0052010017 SG-8101CB 24.545400 MHz 5.00 x 3.20 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052010018 SG-8101CB 28.636400 MHz 5.00 x 3.20 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052010020 SG-8101CB 153.600000 MHz 5.00 x 3.20 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0052110011 SG-8101CE 25.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110016 SG-8101CE 40.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110017 SG-8101CE 12.500000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0052110018 SG-8101CE 25.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0052110019 SG-8101CE 10.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0052110020 SG-8101CE 100.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110021 SG-8101CE 80.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110022 SG-8101CE 48.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110023 SG-8101CE 25.000500 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110025 SG-8101CE 125.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110033 SG-8101CE 27.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110034 SG-8101CE 3.686400 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110035 SG-8101CE 88.888800 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0052110037 SG-8101CE 70.047536 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110038 SG-8101CE 60.787000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110041 SG-8101CE 32.768000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110042 SG-8101CE 1.544000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110044 SG-8101CE 114.285000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0052110045 SG-8101CE 50.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-20 ppm
X1G0055710011 SG-8018CA 25.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710012 SG-8018CA 25.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710013 SG-8018CA 20.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710014 SG-8018CA 20.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710015 SG-8018CA 50.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710016 SG-8018CA 50.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710017 SG-8018CA 48.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710018 SG-8018CA 48.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710019 SG-8018CA 24.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710020 SG-8018CA 24.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710021 SG-8018CA 40.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710022 SG-8018CA 40.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710023 SG-8018CA 16.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710024 SG-8018CA 16.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710025 SG-8018CA 12.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710026 SG-8018CA 12.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710027 SG-8018CA 10.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710028 SG-8018CA 10.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710029 SG-8018CA 27.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710030 SG-8018CA 27.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710031 SG-8018CA 32.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710032 SG-8018CA 32.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710033 SG-8018CA 8.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710034 SG-8018CA 8.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710035 SG-8018CA 14.745600 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710036 SG-8018CA 14.745600 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710037 SG-8018CA 12.288000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710038 SG-8018CA 12.288000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710039 SG-8018CA 33.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710040 SG-8018CA 33.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710041 SG-8018CA 30.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710042 SG-8018CA 30.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
X1G0055710043 SG-8018CA 26.000000 MHz 7.00 x 5.00 x 1.40 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm
深圳市壹兆電子科技有限公司
有源晶振聯(lián)系人：龔成  
石英晶體振蕩器電話：0755--27876236
QQ：769468702
進(jìn)口晶振手機(jī)：13590198504
陶瓷晶振郵箱:zhaoxiandz@163.com
日本臺灣歐美晶振品牌網(wǎng)站:http://ellentracy.cn

相關(guān)新聞:

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愛普生SG-8018CB可編程晶振X1G005581011600具有極好的抗震性能


愛普生晶振為開發(fā)和型號替換用戶提供SG-8018系列X1G005591027900可編程石英晶振

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