愛普生SG-8018CB可編程晶振X1G005581011600具有極好的抗震性能
愛普生SG-8018CB可編程晶振X1G005581011600具有極好的抗震性能
產(chǎn)品編碼 | 頻率 | 貼片晶振 | 尺寸(長寬高) | 輸出波 | 電源電壓 | 工作溫度 |
X1G005581001100 | 25.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001200 | 25.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001300 | 20.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001400 | 20.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001500 | 50.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001600 | 50.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001700 | 48.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001800 | 48.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001900 | 24.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002000 | 24.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002100 | 40.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002200 | 40.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002300 | 16.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002400 | 16.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002500 | 12.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002600 | 12.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002700 | 10.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002800 | 10.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011100 | 1.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011200 | 75.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011300 | 19.600000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011400 | 156.250000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011500 | 156.250000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011600 | 24.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011700 | 133.330000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011800 | 9.830400 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011900 | 33.333300 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012000 | 25.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012100 | 1.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012200 | 133.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012300 | 29.491200 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012400 | 29.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012500 | 6.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012700 | 6.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012800 | 7.175000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012900 | 6.870000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
愛普生SG-8018CB可編程晶振X1G005581011600具有極好的抗震性能
可編程晶振的特點:
①全自動化半導體工藝(芯片級),無氣密性問題,永不停振!
②集成了溫度補償電路,全溫度范圍無溫漂,-40℃-85℃全溫保證;
③平均無故障工作時間(MTBF)長達5億小時!
④低抖動、低功耗、耐高溫、高壓、高濕、抗震性能好
⑤支持1-800MHZ任一頻點,精確致小數(shù)點后5位輸出。(如:65.53500MHz)。
⑥支持1.8V、2.5V、2.8V、3.3V多種工作電壓匹配!
⑦支持±10PPM、±20PPM、±25PPM、±30PPM、±50PPM等各種精度匹配!
⑧國際標準QFN封裝:7050、5032、3225、2520 可編程晶振應用于鐘表、數(shù)碼產(chǎn)品、車載數(shù)碼、手機、對講機、數(shù)碼相機、MID平板電腦,光電技術等通訊設備及各種頻率控制設備。
可編程晶振實為有源晶振,石英可編程(Q MEMS)具有高穩(wěn)定、高精度等優(yōu)越性能的石英材料[QUARTZ]和[MEMS]組合而成的造詞,以石英為原料進行精微加工(光刻)并可以提供的小型化、高性能的晶體元器件被稱為[Q MEMS]。應用于5G-WIFI6、物聯(lián)網(wǎng)通訊、鐘表、車載導航、智能手機、對講機、數(shù)碼產(chǎn)品,光電技術等通訊設備及各種頻率控制設備。
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